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90 Nm Process
The 90 nm process refers to the technology used in semiconductor manufacturing to create integrated circuits with a minimum feature size of 90 nanometers. It was an advancement over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes. It was commercialized by the 2003–2005 timeframe, by semiconductor companies including Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology. The origin of the 90 nm value is historical; it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS). The 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter. The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm nod ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Manufacturing
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as Random-access memory, RAM and flash memory). It is a multiple-step Photolithography, photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer (electronics), wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. This article focuses on the manufacture of integrated circuits, however steps such as etching and photolithography can be used to manufacture other devices such as LCD and OLED displays. The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the cen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanometre
330px, Different lengths as in respect to the Molecule">molecular scale. The nanometre (international spelling as used by the International Bureau of Weights and Measures; SI symbol: nm), or nanometer (American spelling), is a unit of length in the International System of Units (SI), equal to one billionth ( short scale) or one thousand million (long scale) of a meter (0.000000001 m) and to 1000 picometres. One nanometre can be expressed in scientific notation as 1 × 10−9 m and as m. History The nanometre was formerly known as the "''millimicrometre''" – or, more commonly, the "''millimicron''" for short – since it is of a micrometer. It was often denoted by the symbol ''mμ'' or, more rarely, as ''μμ'' (however, ''μμ'' should refer to a ''millionth'' of a micron). Etymology The name combines the SI prefix '' nano-'' (from the Ancient Greek , ', "dwarf") with the parent unit name ''metre'' (from Greek , ', "unit of measurement"). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon-on-insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate (materials science), substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic device ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Samsung Semiconductor
Samsung Electronics Co., Ltd. (SEC; stylized as SΛMSUNG; ) is a South Korean multinational major appliance and consumer electronics corporation founded on 13 January 1969 and headquartered in Yeongtong District, Suwon, South Korea. It is currently the pinnacle of the Samsung ''chaebol'', accounting for 70% of the group's revenue in 2012, and has played a key role in the group's corporate governance due to cross ownership. It is majority-owned by foreign investors. Samsung Electronics is the world's List of largest technology companies by revenue, second-largest technology company by revenue, and its market capitalization stood at US$520.65 billion, the 12th largest in the world. It became the world's largest manufacturer of smartphones in 2024. Samsung is known most notably for its Samsung Galaxy brand consisting of phones such as its flagship Samsung Galaxy S series, Galaxy S series, popular midrange Samsung Galaxy A series, Galaxy A series as well as the premium Samsu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NAND Flash
Flash memory is an Integrated circuit, electronic Non-volatile memory, non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR gate, NOR and NAND gate, NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level, depending on whether the state of the bit line or word lines is pulled high or low; in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire devi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gibibit
The bit is the most basic unit of information in computing and digital communication. The name is a portmanteau of binary digit. The bit represents a logical state with one of two possible values. These values are most commonly represented as either , but other representations such as ''true''/''false'', ''yes''/''no'', ''on''/''off'', or ''+''/''−'' are also widely used. The relation between these values and the physical states of the underlying storage or device is a matter of convention, and different assignments may be used even within the same device or program. It may be physically implemented with a two-state device. A contiguous group of binary digits is commonly called a '' bit string'', a bit vector, or a single-dimensional (or multi-dimensional) ''bit array''. A group of eight bits is called one ''byte'', but historically the size of the byte is not strictly defined. Frequently, half, full, double and quadruple words consist of a number of bytes which is a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EDRAM
Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms. Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
X-ray Lithography
X-ray lithography is a process used in semiconductor device fabrication industry to selectively remove parts of a thin film of photoresist. It uses X-rays to transfer a geometric pattern from a mask to a light-sensitive chemical photoresist, or simply "resist," on the substrate to reach extremely small topological size of a feature. A series of chemical treatments then engraves the produced pattern into the material underneath the photoresist. It's less commonly used in commercial production due to prohibitively high costs of materials (such as gold used for X-rays blocking) etc. Mechanisms X-ray lithography originated as a candidate for next-generation lithography for the semiconductor industry, with batches of microprocessors successfully produced. Having short wavelengths (below 1 nm), X-rays overcome the diffraction limits of optical lithography, allowing smaller feature sizes. If the X-ray source isn't collimated, as with a synchrotron radiation, elementary colli ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ghavam Shahidi
Ghavam G. Shahidi (born 1959) is an Iranian-American electrical engineer and IBM Fellow. He is the director of Silicon Technology at the IBM Thomas J Watson Research Center. He is best known for his pioneering work in silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology since the late 1980s. Career He studied electrical engineering at MIT, where he wrote a PhD thesis on "velocity overshoot in deeply scaled MOSFETs" (metal–oxide–semiconductor field-effect transistors), under supervision of Professor Dimitri A. Antoniadis. A 60nanometer silicon MOSFET (metal–oxide–semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith at MIT in 1986. The device was fabricated using X-ray lithography. Shahidi joined IBM Research in 1989, where he initiated and subsequently led the development of silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology at IBM. It was called the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as Random-access memory, RAM and flash memory). It is a multiple-step Photolithography, photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer (electronics), wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. This article focuses on the manufacture of integrated circuits, however steps such as etching and photolithography can be used to manufacture other devices such as LCD and OLED displays. The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the cen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
