The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to

transistors upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch ...

, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient (or recipients) is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.

Recipients

The past recipients are: *1971 John L. Moll *1972 Charles W. Mueller *1973 Herbert Kroemer *1974 Andrew S. Grove *1975 Jacques I. Pankove *1976 Marion E. Hines *1977 Anthony E. Siegman *1978 Hung C. Lin *1979

James M. Early James M. Early (July 25, 1922 – January 12, 2004) was an American electrical engineer, best known for his work on transistors and charge-coupled device imagers. He was also known as Jim Early. Biography He was born on July 25, 1922, in Syra ...

*1980

James D. Meindl James Donald Meindl (April 20, 1933 – June 7, 2020) was director of the Joseph M. Pettit Microelectronics Research Center and the Marcus Nanotechnology Research Center and Pettit Chair Professor of Microelectronics at the Georgia Institute o ...

*1981

Chih-Tang Sah Chih-Tang "Tom" Sah (; born in November 1932 in Beijing, China) is a Chinese-American electronics engineer and condensed matter physicist. He is best known for inventing CMOS (complementary MOS) logic with Frank Wanlass at Fairchild Semiconducto ...

*1982 Arthur G. Milnes *1983

Adolf Goetzberger Adolf Goetzberger (born 29 November 1928 in Munich) is a German physicist. Life Goetzberger studied physic in Munich, Germany. He finished his university studies with a work over ''Über die Kristallisation aufgedampfter Antimonschichten''. He w ...

*1984

Izuo Hayashi (May 1, 1922 – September 26, 2005) was a Japanese physicist. Hayashi was born in Tokyo in 1922 and graduated from the faculty of science, University of Tokyo in 1946. He worked as assistant professor at the Institute for Nuclear Research of t ...

*1985 Walter F. Kosonocky *1986 Pallab K. Chatterjee *1987 Robert W. Dutton *1988 Al F. Tasch Jr. *1989 Tak H. Ning *1990 Yoshiyuki Takeishi *1991 Simon Min Sze *1992 Louis C. Parrillo *1993 Karl Hess *1994 Alfred U. Macrae *1995 Martin A. Green *1996 Tetsushi Sakai *1997 Marvin H. White *1998 B. Jayant Baliga *1999 James T. Clemens *2000 Bernard S. Meyerson *2001 Hiroshi Iwai *2002 Lester F. Eastman *2003

James D. Plummer James D. Plummer is a Canadian-born electrical engineer. He is the John M. Fluke Professor of Electrical Engineering at Stanford University, and from 1999 to 2014 served as Frederick Emmons Terman Dean of the School of Engineering. Education and ...

*2004 Jerry G. Fossum *2005 Bijan Davari "for contributions to deep-submicron

CMOS Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSF ...

technology and their impact on the IC industry" *2006

Ghavam Shahidi Ghavam G. Shahidi (born 1959) is an Iranian-American electrical engineer and IBM Fellow. He is the director of Silicon Technology at the IBM Thomas J Watson Research Center. He is best known for his pioneering work in silicon-on-insulator (SOI) c ...

"for contributions and leadership in the development of

Silicon-On-Insulator In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving perfo ...

CMOS technology" *2007 Stephen J. Pearton "for developing advanced compound-semiconductor processing techniques, and clarifying the roles of defects and impurities in compound-semiconductor devices" *2008 Mark R. Pinto "for contributions to widely applied

semiconductor A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way ...

technology simulation tools" *2009 Baruch Levush "for contributions to the development of widely applied simulation tools in the

vacuum A vacuum is a space devoid of matter. The word is derived from the Latin adjective ''vacuus'' for "vacant" or " void". An approximation to such vacuum is a region with a gaseous pressure much less than atmospheric pressure. Physicists often ...

electronics industry The electronics industry is the economic sector that produces electronic devices. It emerged in the 20th century and is today one of the largest global industries. Contemporary society uses a vast array of electronic devices built-in automated or ...

" *2010 Mark E. Law "for contributions to widely used

silicon Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ...

integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...

process modeling" *2011 Stuart Wenham "for technical contributions and successful commercialization of high efficiency

solar cells A solar cell, or photovoltaic cell, is an electronic device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical and chemical phenomenon.

" *2012 Yuan Taur "for contributions to the advancement of several generations of CMOS process technologies" *2013

Nobukazu Teranishi is a Japanese engineer who researches image sensors, and is known for inventing the pinned photodiode, an important component of modern digital cameras. He was one of four recipients of the 2017 Queen Elizabeth Prize for Engineering. His industr ...

"for development of the pinned

photodiode A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The packag ...

concept widely used in

image sensors An image sensor or imager is a sensor that detects and conveys information used to make an image. It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of cu ...

" *2014 Joachim N. Burghartz "for contributions to integrated spiral inductors for

wireless Wireless communication (or just wireless, when the context allows) is the transfer of information between two or more points without the use of an electrical conductor, optical fiber or other continuous guided medium for the transfer. The most ...

communication Communication (from la, communicare, meaning "to share" or "to be in relation with") is usually defined as the transmission of information. The term may also refer to the message communicated through such transmissions or the field of inqui ...

ICs and ultra-thin silicon devices for emerging flexible electronics" *2015 Jack Yuan-Chen Sun "for sustained leadership and technical contributions to energy efficient

foundry A foundry is a factory that produces metal castings. Metals are cast into shapes by melting them into a liquid, pouring the metal into a mold, and removing the mold material after the metal has solidified as it cools. The most common metals pr ...

CMOS technologies" *2016 Jaroslav Hynecek "for the pioneering work and advancement of CCD and CMOS image sensor technologies"

References

;Notes {{reflist ;Sources *

(September 1971
Announcement: Electron Devices Group Award Established
''IEEE Transactions on Electron Devices'', volume ED 18, No. 9, page 613. * IEEE Electron Devices Societ

IEEE society and council awards Awards established in 1971

Recipients

See also

References