Hafnium disulfide is an inorganic chemistry, inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS
2. A few atomic layers of this material can be exfoliated using the standard Graphene production techniques#Adhesive tape, Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS
2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS
2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.
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Hafnium compounds
Sulfides
Transition metal dichalcogenides
Monolayers