The 32 nm node is the step following the 45 nm process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the 32 nm process in 2009.[1] Intel and AMD produced commercial microchips using the 32-nanometre process in the early 2010s. IBM and the Common Platform also developed a 32 nm high-╬║ metal gate process.[2] Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010.

The 28-nanometre node was an intermediate half-node die shrink based on the 32-nanometre process.

The 32 nm process was superseded by commercial 22 nm technology in 2012.[3][4]