Monolithic microwave integrated circuit, or MMIC (sometimes pronounced "mimic"), is a type of integrated circuit (IC) device that operates at

microwave Microwave is a form of electromagnetic radiation with wavelengths ranging from about one meter to one millimeter corresponding to frequencies between 300 MHz and 300 GHz respectively. Different sources define different frequency ra ...

frequencies Frequency is the number of occurrences of a repeating event per unit of time. It is also occasionally referred to as ''temporal frequency'' for clarity, and is distinct from ''angular frequency''. Frequency is measured in hertz (Hz) which is e ...

(300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are frequently matched to a

characteristic impedance The characteristic impedance or surge impedance (usually written Z0) of a uniform transmission line is the ratio of the amplitudes of voltage and current of a single wave propagating along the line; that is, a wave travelling in one direction i ...

of 50 ohms. This makes them easier to use, as cascading of MMICs does not then require an external matching network. Additionally, most microwave test equipment is designed to operate in a 50-ohm environment. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced, which has allowed the proliferation of high-frequency devices such as cellular phones. MMICs were originally fabricated using

gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated c ...

(GaAs), a III-V compound semiconductor. It has two fundamental advantages over

silicon Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ...

(Si), the traditional material for IC realisation: device (

transistor upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch ...

) speed and a semi-insulating substrate. Both factors help with the design of high-frequency circuit functions. However, the speed of Si-based technologies has gradually increased as transistor feature sizes have reduced, and MMICs can now also be fabricated in Si technology. The primary advantage of Si technology is its lower fabrication cost compared with GaAs. Silicon wafer diameters are larger (typically 8" to 12" compared with 4" to 8" for GaAs) and the wafer costs are lower, contributing to a less expensive IC. Originally, MMICs used metal-semiconductor field-effect transistors (MESFETs) as the active device. More recently high-electron-mobility transistor (HEMTs), pseudomorphic HEMTs and heterojunction bipolar transistors have become common. Other III-V technologies, such as

indium phosphide Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (" zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide ...

(InP), have been shown to offer superior performance to GaAs in terms of gain, higher cutoff frequency, and low noise. However, they also tend to be more expensive due to smaller wafer sizes and increased material fragility.

Silicon germanium Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic tabl ...

(SiGe) is a Si-based compound semiconductor technology offering higher-speed transistors than conventional Si devices but with similar cost advantages. Gallium nitride (GaN) is also an option for MMICs. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than GaAs transistors, they make ideal power amplifiers at microwave frequencies.

References

* ''Practical MMIC Design'', Steve Marsh, published by Artech House * ''RFIC and MMIC Design and Technology'', editors I. D. Robertson and S. Lucyszyn, published by the IEE (London) {{Authority control Integrated circuits Microwave technology

See also

References