
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable
thyristor
A thyristor (, from a combination of Greek language ''θύρα'', meaning "door" or "valve", and ''transistor'' ) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage ...
, controlled by
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale.
In electronics, the metal–oxide–semiconductor field- ...
s (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier
insulated-gate bipolar transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that ...
(IGBT).
[V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984.] MCTs are similar in operation to
GTO thyristors, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal
SCRs), is called an MOS-gated thyristor.

Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state.
Negative voltage on the gate terminal with respect to the anode, which is close to cathode voltage during the on state, turns the thyristor to the off state.
MCTs were commercialized only briefly.
External links
Field-effect-controlled thyristor* "MOS GTO—A Turn Off Thyristor with MOS-Controlled Emitter Shorts," IEDM 85, M. Stoisiek and H. Strack, Siemens AG, Munich FRG pp. 158–161.
* "MOS-Controlled Thyristors—A New Class of Power Devices", IEEE Transactions on Electron Devices, Vol. ED-33, No. 10, Oct. 1986, Victor A. K. Temple, pp. 1609 through 1618.
References
Solid state switches
Power electronics
MOSFETs
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