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Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of
boron Boron is a chemical element; it has symbol B and atomic number 5. In its crystalline form it is a brittle, dark, lustrous metalloid; in its amorphous form it is a brown powder. As the lightest element of the boron group it has three ...
and
phosphorus Phosphorus is a chemical element; it has Chemical symbol, symbol P and atomic number 15. All elemental forms of phosphorus are highly Reactivity (chemistry), reactive and are therefore never found in nature. They can nevertheless be prepared ar ...
. It is a
semiconductor A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping level ...
.


History

Crystals of boron phosphide were synthesized by
Henri Moissan Ferdinand Frédéric Henri Moissan (; 28 September 1852 – 20 February 1907) was a French chemist and pharmacist who won the 1906 Nobel Prize in Chemistry for his work in isolating fluorine from its compounds. Among his other contributions, Mo ...
as early as 1891.


Appearance

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.


Chemical properties

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.


Physical properties

BP is known to be chemically inert and exhibit very high thermal conductivity. Some properties of BP are listed below: * lattice constant 0.45383 nm * coefficient of thermal expansion 3.65 /°C (400 K) * heat capacity CP ~ 0.8 J/(g·K) (300 K) * Debye temperature = 985 K *
Bulk modulus The bulk modulus (K or B or k) of a substance is a measure of the resistance of a substance to bulk compression. It is defined as the ratio of the infinitesimal pressure increase to the resulting ''relative'' decrease of the volume. Other mo ...
152 GPa * relatively high microhardness of 32 GPa (100 g load). * electron and hole mobilities of a few hundred cm2/(V·s) (up to 500 for holes at 300 K) * high thermal conductivity of ~ 460 W/(m·K) at room temperature


See also

*
Boron arsenide Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds are known, such as the subarsenide . Chemical synthesis of cubic BAs is very challenging and ...
*
Boron nitride Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula B N. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexago ...
*
Aluminium phosphide Aluminium phosphide is a highly toxic inorganic compound with the chemical formula AlP, used as a wide band gap semiconductor and a fumigant. This colorless solid is generally sold as a grey-green-yellow powder due to the presence of impurities ...
*
Gallium phosphide Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single cr ...


References


Further reading

* * * {{DEFAULTSORT:Boron Phosphide Boron compounds Phosphides III-V semiconductors III-V compounds Zincblende crystal structure