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Wafer Bonding
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s. Overview In microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), the package protects the sensitive internal structures from environmental influences such as temperature, moisture, high pressure and oxidizing species. The long-term stability and reliability of the functional elements depend on the encapsulation process, as does the overall device cost. The package has to fulfill the following requi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface Activated Bonding
Surface activated bonding (SAB) is a low-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductor, metal, and dielectric can be obtained even at room temperature. Overview In the standard SAB method, wafer surfaces are activated by argon fast atom bombardment in ultra-high vacuum Ultra-high vacuum (UHV) is the vacuum regime characterised by pressures lower than about . UHV conditions are created by pumping the gas out of a UHV chamber. At these low pressures the mean free path of a gas molecule is greater than approximately ... (UHV) of 10−4–10−7 Pa. The bombardment removes adsorbed contaminants and native oxides on the surfaces. The activated surfaces are atomically clean and reactive for formation of direct bonds between wafers when they are brought into contact even at room temperature. Researche ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit. History In the semiconductor or silicon wafer industry, the term wafer appeared in the 1950s to describe a thin round slice of semiconductor material, typically germanium or silicon. Round shape comes from single-crystal ingots usually produced using the Czochralski method. Silicon wafers were first introduced in the 1940s. By 1960, silicon wafers were being manufactured in the U.S. by c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Adhesive Bonding
Adhesive bonding is a joining technique used in the manufacture and repair of a wide range of products. Along with welding and soldering, adhesive bonding is one of the basic joining processes. In this technique, components are bonded together using adhesives. The broad range of types of adhesives available allows numerous materials to be bonded together in products as diverse as vehicles, mobile phones, personal care products, buildings, computers and medical devices. History An adhesive can be defined as a substance that causes two surfaces to stick together. By this definition, the earliest “adhesive” could be considered to have been developed three billion years ago, when primordial cells produced a tacky outer membrane allowing them to stick to adjacent cells. The first use of adhesives by humans can be dated to around 220,000 B.C., when tar from birch tree bark was used to glue stone arrowheads to a shaft. Basics According to thdefinition of EN 923 “Adhesives. T ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Packaging (microfabrication)
In electronics manufacturing, integrated circuit packaging is the final stage of semiconductor device fabrication, in which the block of semiconductor material is encapsulated in a supporting case that prevents physical damage and corrosion. The case, known as a " package", supports the electrical contacts which connect the device to a circuit board. In the integrated circuit industry, the process is often referred to as packaging. Other names include semiconductor device assembly, assembly, encapsulation or sealing. The packaging stage is followed by testing of the integrated circuit. The term is sometimes confused with electronic packaging, which is the mounting and interconnecting of integrated circuits (and other components) onto printed-circuit boards. Design considerations Electrical The current-carrying traces that run out of the die, through the package, and into the printed circuit board (PCB) have very different electrical properties compared to on-chip signa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronics Manufacturing
Electronics Manufacturing Services (EMS) is a term used for companies that design, manufacture, test, distribute, and provide return/repair services for electronic components and assemblies for original equipment manufacturers (OEMs). The concept is also referred to as Electronics Contract Manufacturing (ECM). Many consumer electronics are built in China, due to maintenance cost, availability of materials, and speed as opposed to other countries such as the United States. Cities such as Shenzhen and Penang have become important production centres for the industry, attracting many consumer electronics companies such as Apple Inc. Some companies such as Flex and Wistron are Original design manufacturers and providers of Electronics manufacturing services. History The EMS industry was initially established in 1961 by SCI Systems of Huntsville Alabama. The industry realized its most significant growth in the 1980s; at the time, most electronics manufacturing for large-scale product ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer Bonding
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s. Overview In microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), the package protects the sensitive internal structures from environmental influences such as temperature, moisture, high pressure and oxidizing species. The long-term stability and reliability of the functional elements depend on the encapsulation process, as does the overall device cost. The package has to fulfill the following requi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bond Characterization
The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities. The bond connection is characterized for wafer bond development or quality assessment of fabricated wafers and sensors. Overview Wafer bonds are commonly characterized by three important encapsulation parameters: bond strength, hermeticity of encapsulation and bonding induced stress. The bond strength can be evaluated using double cantilever beam or chevron respectively micro-chevron tests. Other pull tests as well as burst, direct shear tests or bend tests enable the determination of the bond strength. The packaging hermeticity is characterized using membrane, He-leak, resonator/pressure tests. Three additional possibilities to evaluate the bond connection are optical, electron and Acoustical measurements and instrumentation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transient Liquid Phase Diffusion Bonding
Transient liquid phase diffusion bonding (TLPDB) is a joining process that has been applied for bonding many metallic and ceramic systems which cannot be bonded by conventional fusion welding techniques. The bonding process produces joints with a uniform composition profile, tolerant of surface oxides and geometrical defects. The bonding technique has been exploited in a wide range of applications, from the production and repair of turbine engines in the aerospace industry, to nuclear power plants, and in making connections to integrated circuit dies as a part of the microelectronics industry. Process The process differs from diffusion bonding, in which diffusion occurs when a melting point represent element from an interlayer moves into lattice and grain boundaries of the substrates at the bonding temperature. Solid state diffusional processes lead to a change of composition at the bond interface and the dissimilar interlayer melts at a lower temperature than the parent materials. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Reactive Bonding
Reactive bonding describes a wafer bonding procedure using highly reactive nanoscale multilayer systems as an intermediate layer between the bonding substrates. The multilayer system consists of two alternating different thin metallic films. The self-propagating exothermic reaction within the multilayer system contributes the local heat to bond the solder films. Based on the limited temperature the substrate material is exposed, temperature-sensitive components and materials with different CTEs, i.e. metals, polymers and ceramics, can be used without thermal damage. Overview ] The bonding is based on reactive nano scale multilayers providing an internal heat source. These foils are combined with additional solder layers to achieve bonding. The heat that is required for the bonding is created by a self-propagating exothermic reaction of the multilayer system. This reaction is ignited by an energy pulse, i.e. temperature, mechanical pressure, electrical spark or laser pulse. The ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thermocompression Bonding
Thermocompression bonding describes a wafer bonding technique and is also referred to as diffusion bonding, pressure joining, thermocompression welding or solid-state welding. Two metals, e.g. gold- gold (Au), are brought into atomic contact applying force and heat simultaneously. The diffusion requires atomic contact between the surfaces due to the atomic motion. The atoms migrate from one crystal lattice to the other one based on crystal lattice vibration. This atomic interaction sticks the interface together. The diffusion process is described by the following three processes: * surface diffusion * grain boundary diffusion * bulk diffusion This method enables internal structure protecting device packages and direct electrical interconnect structures without additional steps beside the surface mounting process. Overview The most established materials for thermocompression bonding are copper (Cu), gold (Au) and aluminium (Al) because of their high diffusion rates. In additi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Glass Frit Bonding
Glass frit bonding, also referred to as glass soldering or seal glass bonding, describes a wafer bonding technique with an intermediate glass layer. It is a widely used encapsulation technology for surface micro-machined structures, e.g., accelerometers or gyroscopes. This technique utilizes low melting-point glass ("glass solder") and therefore provides various advantages including that viscosity of glass decreases with an increase of temperature. The viscous flow of glass has effects to compensate and planarize surface irregularities, convenient for bonding wafers with a high roughness due to plasma etching or deposition. A low viscosity promotes hermetically sealed encapsulation of structures based on a better adaption of the structured shapes. Further, the coefficient of thermal expansion (CTE) of the glass material is adapted to silicon. This results in low stress in the bonded wafer pair. The glass has to flow and wet the soldered surfaces well below the temperature whe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Microelectromechanical Systems
Microelectromechanical systems (MEMS), also written as micro-electro-mechanical systems (or microelectronic and microelectromechanical systems) and the related micromechatronics and microsystems constitute the technology of microscopic devices, particularly those with moving parts. They merge at the nanoscale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines in Japan and microsystem technology (MST) in Europe. MEMS are made up of components between 1 and 100 micrometers in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2. They usually consist of a central unit that processes data (an integrated circuit chip such as microprocessor) and several components that interact with the surroundings (such as microsensors). Because of th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
