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Indium Gallium Arsenide
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are Group 13 element, group III elements of the periodic table while arsenic is a Group 15 element, group V element. Alloys made of these chemical groups are referred to as III-V compound semiconductor, "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number ...
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Chemical Compound
A chemical compound is a chemical substance composed of many identical molecules (or molecular entities) containing atoms from more than one chemical element held together by chemical bonds. A molecule consisting of atoms of only one element is therefore not a compound. A compound can be transformed into a different substance by a chemical reaction, which may involve interactions with other substances. In this process, bonds between atoms may be broken or new bonds formed or both. There are four major types of compounds, distinguished by how the constituent atoms are bonded together. Molecular compounds are held together by covalent bonds; ionic compounds are held together by ionic bonds; intermetallic compounds are held together by metallic bonds; coordination complexes are held together by coordinate covalent bonds. Non-stoichiometric compounds form a disputed marginal case. A chemical formula specifies the number of atoms of each element in a compound molecule, usin ...
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InGaAs Energy Band Composition
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the most ...
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Electron Effective Mass
In solid state physics, a particle's effective mass (often denoted m^*) is the mass that it ''seems'' to have when responding to forces, or the mass that it seems to have when interacting with other identical particles in a thermal distribution. One of the results from the band theory of solids is that the movement of particles in a periodic potential, over long distances larger than the lattice spacing, can be very different from their motion in a vacuum. The effective mass is a quantity that is used to simplify band structures by modeling the behavior of a free particle with that mass. For some purposes and some materials, the effective mass can be considered to be a simple constant of a material. In general, however, the value of effective mass depends on the purpose for which it is used, and can vary depending on a number of factors. For electrons or electron holes in a solid, the effective mass is usually stated as a factor multiplying the rest mass of an electron, ''m''e ...
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Fiber-optic Communications
Fiber-optic communication is a form of optical communication for transmitting information from one place to another by sending pulses of infrared or visible light through an optical fiber. The light is a form of carrier wave that is modulated to carry information. Fiber is preferred over electrical cabling when high bandwidth, long distance, or immunity to electromagnetic interference is required. This type of communication can transmit voice, video, and telemetry through local area networks or across long distances. Optical fiber is used by many telecommunications companies to transmit telephone signals, internet communication, and cable television signals. Researchers at Bell Labs have reached a record bandwidth–distance product of over kilometers per second using fiber-optic communication. Background First developed in the 1970s, fiber-optics have revolutionized the telecommunications industry and have played a major role in the advent of the Information Age. Becau ...
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Laser
A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word ''laser'' originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow and the optical amplifier patented by Gordon Gould. A laser differs from other sources of light in that it emits light that is coherence (physics), ''coherent''. Spatial coherence allows a laser to be focused to a tight spot, enabling uses such as optical communication, laser cutting, and Photolithography#Light sources, lithography. It also allows a laser beam to stay narrow over great distances (collimated light, collimation), used in laser pointers, lidar, and free-space optical communication. Lasers can also have high temporal coherence, which permits them to emit light ...
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Photoluminescence
Photoluminescence (abbreviated as PL) is light emission from any form of matter after the absorption of photons (electromagnetic radiation). It is one of many forms of luminescence (light emission) and is initiated by photoexcitation (i.e. photons that excite electrons to a higher energy level in an atom), hence the prefix ''photo-''. Following excitation, various relaxation processes typically occur in which other photons are re-radiated. Time periods between absorption and emission may vary: ranging from short femtosecond-regime for emission involving free-carrier plasma in inorganic semiconductorsHayes, G.R.; Deveaud, B. (2002). "Is Luminescence from Quantum Wells Due to Excitons?". ''Physica Status Solidi A'' 190 (3): 637–640doi:10.1002/1521-396X(200204)190:33.0.CO;2-7/ref> up to milliseconds for phosphoresence processes in molecular systems; and under special circumstances delay of emission may even span to minutes or hours. Observation of photoluminescence at a certain ...
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Electron Mobility
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for Electron hole, holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of square centimetre, cm2/(volt, V⋅second, s). This is different from the SI unit of mobility, square metre, m2/(volt, V⋅second, s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Electrical resistivity and conductivity, Conductivity is proportiona ...
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Band Gap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there ...
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Single Crystal
In materials science, a single crystal (or single-crystal solid or monocrystalline solid) is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no Grain boundary, grain boundaries. The absence of the crystallographic defect, defects associated with grain boundaries can give monocrystals unique properties, particularly mechanical, optical and electrical, which can also be anisotropic, depending on the type of crystallography, crystallographic structure. These properties, in addition to making some gems precious, are industrially used in technological applications, especially in optics and electronics. Because entropy, entropic effects favor the presence of some imperfections in the microstructure of solids, such as impurity, impurities, inhomogeneous strain and crystallographic defects such as dislocations, perfect single crystals of meaningful size are exceedingly rare in nature. The necessary laboratory condi ...
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GaInAs Photoluminescence
Gainas (Greek: Γαϊνάς) was a Gothic leader who served the Eastern Roman Empire as ''magister militum'' during the reigns of Theodosius I and Arcadius. He played an important role in the events in the eastern part of the empire by the end of the 4th century. Career Gainas began his military career as a common foot-soldier, but later commanded the barbarian contingent of Theodosius' army against the usurper Eugenius in 394. Under the command of Gainas, a man of "no lineage", was the young Alaric of the Balti dynasty. In 395, during the Revolt of Alaric I, Stilicho sent him with his troops, under the cover of strengthening the armies of the East, to depose the prefect Rufinus, who was hostile to Stilicho. Gainas murdered Rufinus, but the eunuch Eutropius, who was likewise Stilicho's enemy, gained power. Gainas remained mostly unrewarded by the influential eunuch, which increased his resentment. In 399 he finally rose in stature by replacing ''magister militum'' Leo. ...
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GaInAs Lattice Parameter
Gainas (Greek: Γαϊνάς) was a Gothic leader who served the Eastern Roman Empire as ''magister militum'' during the reigns of Theodosius I and Arcadius. He played an important role in the events in the eastern part of the empire by the end of the 4th century. Career Gainas began his military career as a common foot-soldier, but later commanded the barbarian contingent of Theodosius' army against the usurper Eugenius in 394. Under the command of Gainas, a man of "no lineage", was the young Alaric of the Balti dynasty. In 395, during the Revolt of Alaric I, Stilicho sent him with his troops, under the cover of strengthening the armies of the East, to depose the prefect Rufinus, who was hostile to Stilicho. Gainas murdered Rufinus, but the eunuch Eutropius, who was likewise Stilicho's enemy, gained power. Gainas remained mostly unrewarded by the influential eunuch, which increased his resentment. In 399 he finally rose in stature by replacing ''magister militum'' Leo. T ...
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Bandgap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in Electrical insulation, insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO, HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the ...
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