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Drift-field Transistor
The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term i ... base transit time. Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors. Early drift transistors were made by diffusing the base dopant in a way that caused a higher doping concentration near the emitter reducing towards the collector. This graded base happens automatically with the double diffused planar transistor (so they aren't usually called drift transi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, alo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electric Field
An electric field (sometimes E-field) is the physical field that surrounds electrically charged particles and exerts force on all other charged particles in the field, either attracting or repelling them. It also refers to the physical field for a system of charged particles. Electric fields originate from electric charges and time-varying electric currents. Electric fields and magnetic fields are both manifestations of the electromagnetic field, one of the four fundamental interactions (also called forces) of nature. Electric fields are important in many areas of physics, and are exploited in electrical technology. In atomic physics and chemistry, for instance, the electric field is the attractive force holding the atomic nucleus and electrons together in atoms. It is also the force responsible for chemical bonding between atoms that result in molecules. The electric field is defined as a vector field that associates to each point in space the electrostatic ( Coulomb) for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Charge Carrier
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Herbert Kroemer
Herbert Kroemer (; born August 25, 1928) is a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer is professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies. Career Kroemer worked in a number of research laboratories in Germany and the United States and taught electrical engineering at the University of Colorado from 1968 to 1976. He joined the UCSB faculty in 1976, focusing its semiconductor research program on the emerging compound semiconductor technology rather than on mainstream silicon technology. Along wit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Saturated Drift Transistor Resistor Logic
The IBM 1620 was announced by IBM on October 21, 1959, and marketed as an inexpensive scientific computer. After a total production of about two thousand machines, it was withdrawn on November 19, 1970. Modified versions of the 1620 were used as the CPU of the IBM 1710 and IBM 1720 Industrial Process Control Systems (making it the first digital computer considered reliable enough for real-time process control of factory equipment). Being variable-word-length decimal, as opposed to fixed-word-length pure binary, made it an especially attractive first computer to learn on and hundreds of thousands of students had their first experiences with a computer on the IBM 1620. Core memory cycle times were 20 microseconds for the (earlier) Model I, 10 microseconds for the Model II (about a thousand times slower than typical computer main memory in 2006). The Model II was introduced in 1962. Architecture Memory The IBM 1620 was a variable "word" length decimal ( BCD) computer with a ma ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IBM 1620
The IBM 1620 was announced by IBM on October 21, 1959, and marketed as an inexpensive scientific computer. After a total production of about two thousand machines, it was withdrawn on November 19, 1970. Modified versions of the 1620 were used as the CPU of the IBM 1710 and IBM 1720 Industrial Process Control Systems (making it the first digital computer considered reliable enough for real-time process control of factory equipment). Being variable-word-length decimal, as opposed to fixed-word-length pure binary, made it an especially attractive first computer to learn on and hundreds of thousands of students had their first experiences with a computer on the IBM 1620. Core memory cycle times were 20 microseconds for the (earlier) Model I, 10 microseconds for the Model II (about a thousand times slower than typical computer main memory in 2006). The Model II was introduced in 1962. Architecture Memory The IBM 1620 was a variable "word" length decimal ( BCD) computer with a m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Types
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually const ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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