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Channel Length Modulation
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling. It also causes distortion in JFET amplifiers. To understand the effect, first the notion of pinch-off of the channel is introduced. The channel is formed by attraction of carriers to the gate, and the current drawn through the channel is nearly a constant independent of drain voltage in saturation mode. However, near the drain, the gate ''and drain'' jointly determine the electric field pattern. Instead of flowing in a channel, beyond the pinch-off point the carriers flow in a subsurface pattern made possible because the drain and the gate both control the current. In the figure at the right, the channel is indicated by a dashed line and b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Mosfet Saturation
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Amplifiers
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a signal (a time-varying voltage or current). It may increase the power significantly, or its main effect may be to boost the voltage or current ( power, voltage or current amplifier). It is a two-port electronic circuit that uses electric power from a power supply to increase the amplitude of a signal applied to its input terminals, producing a greater amplitude signal at its output. The ratio of output to input voltage, current, or power is termed gain (voltage, current, or power gain). An amplifier, by definition has gain greater than unity (if the gain is less than unity, the device is an attenuator). An amplifier can either be a separate piece of equipment or an electrical circuit contained within another device. Amplification is fundamental to modern electronics, and amplifiers are widely used in almost all electronic equipment. Amplifiers can be cat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Models
Transistors are simple devices with complicated behavior. In order to ensure the reliable operation of circuits employing transistors, it is necessary to scientifically model the physical phenomena observed in their operation using transistor models. There exists a variety of different models that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models for circuit design. Models for device design The modern transistor has an internal structure that exploits complex physical mechanisms. Device design requires a detailed understanding of how device manufacturing processes such as ion implantation, impurity diffusion, oxide growth, annealing, and etching affect device behavior. Process models simulate the manufacturing steps and provide a microscopic description of device "geometry" to the device simulator. "Geometry" does not mean readily identified geometrical features such as a planar or wrap-around gate structu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hybrid-pi Model
The hybrid-pi model is a popular circuit model used for analyzing the small signal behavior of bipolar junction and field effect transistors. Sometimes it is also called Giacoletto model because it was introduced by L.J. Giacoletto in 1969. The model can be quite accurate for low-frequency circuits and can easily be adapted for higher frequency circuits with the addition of appropriate inter-electrode capacitances and other parasitic elements. BJT parameters The hybrid-pi model is a linearized two-port network approximation to the BJT using the small-signal base-emitter voltage, \scriptstyle v_\text, and collector-emitter voltage, \scriptstyle v_\text, as independent variables, and the small-signal base current, \scriptstyle i_\text, and collector current, \scriptstyle i_\text, as dependent variables. A basic, low-frequency hybrid-pi model for the bipolar transistor is shown in figure 1. The various parameters are as follows. :g_\text = \left.\frac\right\vert_ = \frac is the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Short Channel Effect
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. See also * Channel length modulation Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias an ... * Reverse short-channel effect References MOSFETs Transistor modeling {{electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SPICE
A spice is a seed, fruit, root, bark, or other plant substance primarily used for flavoring or coloring food. Spices are distinguished from herbs, which are the leaves, flowers, or stems of plants used for flavoring or as a garnish. Spices are sometimes used in medicine, religious rituals, cosmetics or perfume production. For example, vanilla is commonly used as an ingredient in fragrance manufacturing. A spice may be available in several forms: fresh, whole dried, or pre-ground dried. Generally, spices are dried. Spices may be ground into a powder for convenience. A whole dried spice has the longest shelf life, so it can be purchased and stored in larger amounts, making it cheaper on a per-serving basis. A fresh spice, such as ginger, is usually more flavorful than its dried form, but fresh spices are more expensive and have a much shorter shelf life. Some spices are not always available either fresh or whole, for example turmeric, and often must be purchased in ground ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ballistic Transport
In mesoscopic physics, ballistic conduction (ballistic transport) is the unimpeded flow (or transport) of charge carriers (usually electrons), or energy-carrying particles, over relatively long distances in a material. In general, the resistivity of a material exists because an electron, while moving inside a medium, is scattered by impurities, defects, thermal fluctuations of ions in a crystalline solid, or, generally, by any freely-moving atom/molecule composing a gas or liquid. Without scattering, electrons simply obey Newton's second law of motion at non-relativistic speeds. The mean free path of a particle can be described as the average length that the particle can travel freely, i.e., before a collision, which could change its momentum. The mean free path can be increased by reducing the number of impurities in a crystal or by lowering its temperature. Ballistic transport is observed when the mean free path of the particle is (much) longer than the dimension of the med ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Velocity Saturation
Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a charge carrier can not move any faster, having reached its saturation velocity, due to mechanisms that eventually limit the movement of the carriers in the material. As the applied electric field increases from that point, the carrier velocity no longer increases becau ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
65nm
The 65 nm process is an advanced lithographic node used in volume CMOS ( MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. Toshiba and Sony announced the 65 nm process in 2002, before Fujitsu and Toshiba began production in 2004, and then TSMC began production in 2005. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips. While feature sizes may be drawn as 65 nm or less, the wavelengths of light used for lithography are 193 nm and 248 nm. Fabrication of sub-wavelength features requires special imaging technologies, such as optical proximity correction and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current Mirror
A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being "copied" can be, and sometimes is, a varying signal current. Conceptually, an ideal current mirror is simply an ideal ''inverting current amplifier'' that reverses the current direction as well. Or it can consist of a current-controlled current source (CCCS). The current mirror is used to provide bias currents and active loads to circuits. It can also be used to model a more realistic current source (since ideal current sources don't exist). The circuit topology covered here is one that appears in many monolithic ICs. It is a Widlar mirror without an emitter degeneration resistor in the follower (output) transistor. This topology can only be done in an IC, as the matching has to be extremely close and cannot be achieved with discretes. Another topology is t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field Effect Transistors
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925 a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
