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Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Photonics
Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI). Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups, as a means for keeping on ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metrology
Metrology is the scientific study of measurement. It establishes a common understanding of units, crucial in linking human activities. Modern metrology has its roots in the French Revolution's political motivation to standardise units in France when a length standard taken from a natural source was proposed. This led to the creation of the decimal-based metric system in 1795, establishing a set of standards for other types of measurements. Several other countries adopted the metric system between 1795 and 1875; to ensure conformity between the countries, the Bureau International des Poids et Mesures (BIPM) was established by the Metre Convention. This has evolved into the International System of Units (SI) as a result of a resolution at the 11th General Conference on Weights and Measures (CGPM) in 1960. Metrology is divided into three basic overlapping activities: * The definition of units of measurement * The realisation of these units of measurement in practice * Traceabil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Soitec
Soitec is an international company, based in France, that manufactures high performance substrates used in the manufacture of semiconductors. Soitec's semiconductor materials are used to manufacture chips which equip smartphones, tablets, computers, IT servers, and data centres. Soitec's products are also found in electronic components used in cars, connected objects (Internet of Things), as well as industrial and medical equipment. Soitec's flagship product is silicon on insulator (SOI). Materials produced by Soitec come in the form of substrates (also called "wafers"). These are produced as ultra-thin disks that are 200 to 300 mm in diameter and are less than 1 mm thick. These wafers are then etched and cut to be used for microchips in electronics. History Soitec was founded in 1992 near Grenoble in France by two researchers from CEA Leti, an institute for micro- and nanotechnologies research created by the French Commission for Atomic Energy and Alternativ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer Bonding
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s. Overview In microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), the package protects the sensitive internal structures from environmental influences such as temperature, moisture, high pressure and oxidizing species. The long-term stability and reliability of the functional elements depend on the encapsulation process, as does the overall device cost. The package has to fulfill the following requ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ion Implantation
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (10s of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, an ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SIMOX
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (10s of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Smart Cut SOI Wafer Manufacturing Schema
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SIMOX Processing Schematic
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (10s of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Body Effect
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. In analog devices, the floating body effect is known as the kink effect. One countermeasure to floating body effect involves use of fully depleted (FD) devices. The insulator layer in FD devices is significantly thinner than the channel depletion width. The charge and thus also the body potential of the transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Subthreshold Slope
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour – though being controlled by the gate terminal – is similar to the exponentially decreasing current of a forward biased diode. Therefore a plot of drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately log linear behaviour in this MOSFET operating regime. Its slope is the subthreshold slope. The subthreshold slope is also the reciprocal value In mathematics, a multiplicative inverse or reciprocal for a number ''x'', denoted by 1/''x'' or ''x''−1, is a number which when multiplied by ''x'' yields the multiplicative identity, 1. The multiplicative inverse of a fraction ''a''/'' ... of the subthreshold swing ''Ss-th'' which is usually given as:''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ed., with Kwok K. Ng, 2007, chapter 6.2.4, p. 315, . ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Static Random-access Memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term ''static'' differentiates SRAM from DRAM (''dynamic'' random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost; it is typically used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory. History Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. MOS SRAM was invented in 1964 by John Schmidt at Fairchild Semiconductor. It was a 64-bit MOS p-channel SRAM. The SRAM was the main driver behind any new CMOS-based technology fabrication process since 1959 when CMOS was invented. In 1965, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
