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EPROM
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. Operation Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had brok ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EEPROM
EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase block ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Read-only Memory
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications (like video games) for programmable devices can be distributed as plug-in cartridges containing ROM. Strictly speaking, ''read-only memory'' refers to memory that is hard-wired, such as diode matrix or a mask ROM integrated circuit (IC), which cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of bodge wires and/or the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace the installed device. Floating-gate ROM semiconductor memory in the form of erasab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Eprom
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. Operation Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had brok ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Flash Memory
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written to an er ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs ( metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM (static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to keep the stored value when not being accessed. A seco ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate Transistor
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate Transistor
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dov Frohman
Dov Frohman (Hebrew: דב פרוהמן, also Dov Frohman-Bentchkowsky; born March 28, 1939) is an Israeli electrical engineer and business executive. A former vice president of Intel Corporation, he is the inventor of the erasable programmable read only memory (EPROM) and the founder and first general manager of Intel Israel. He is also the author (with Robert Howard) of ''Leadership the Hard Way'' ( Jossey-Bass, 2008). Biography Dov Frohman was born in March 1939 in Amsterdam, five months before the start of World War II. His parents were Abraham and Feijga Frohman, Polish Jews who had emigrated to the Netherlands in the early 1930s to escape rising anti-Semitism in Poland. In 1942, after the German invasion of the Low Countries and as the Nazi grip on Holland’s Jewish community tightened, his parents decided to give their child to acquaintances in the Dutch resistance who placed him with the Van Tilborghs, an orthodox Christian farming family that lived in the village of S ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate MOSFET
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fused Quartz
Fused quartz, fused silica or quartz glass is a glass consisting of almost pure silica (silicon dioxide, SiO2) in amorphous (non-crystalline) form. This differs from all other commercial glasses in which other ingredients are added which change the glasses' optical and physical properties, such as lowering the melt temperature. Fused quartz, therefore, has high working and melting temperatures, making it less desirable for most common applications. The terms fused quartz and fused silica are used interchangeably, but can refer to different manufacturing techniques, as noted below, resulting in different trace impurities. However fused quartz, being in the glassy state, has quite different physical properties compared to crystalline quartz. Due to its physical properties it finds specialty uses in semiconductor fabrication and laboratory equipment, for instance. Compared to other common glasses, the optical transmission of pure silica extends well into the ultraviolet and infra ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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